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A method has been developed to use the finite escape depth of the photoelectrons emitted in ultraviolet photoemission spectroscopy (UPS) to determine the electronic density-of-states at the interface between two dissimilar metal oxides. Ultrathin films of one oxide are grown heteroepitaxially, one monolayer at a time, on a single-crystal substrate of the other oxide, and UPS spectra are taken after each complete monolayer. By comparing experimental UPS spectra with calculated spectra based on specific models of the interfacial structure, the interfacial density-of-states can be extracted. The two oxide systems studied here are NiO-Fe 3O 4 and CoO-Fe 3O 4. The former system is found to have an atomically abrupt interface, with no significant density of interface states. For CoO, however, an interfacial electronic spectrum, different from that of either the substrate or the overlayer, is found. The spatial extent and possible origin of those interfacial states is discussed. © 2010 WILEY-VCH Verlag GmbH &. Co. KGaA, Weinheim.
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A non-contact atomic force microscopy-based method has been used to map the static lateral forces exerted on an atomically sharp Pt/Ir probe tip by a graphite surface. With measurements carried out at low temperatures and in the attractive regime, where the atomic sharpness of the tip can be maintained over extended time periods, the method allows the quantification and directional analysis of lateral forces with piconewton and picometer resolution as a function of both the in-plane tip position and the vertical tip-sample distance, without limitations due to a finite contact area or to stick-slip-related sudden jumps of tip apex atoms. After reviewing the measurement principle, the data obtained in this case study are utilized to illustrate the unique insight that the method offers. In particular, the local lateral forces that are expected to determine frictional resistance in the attractive regime are found to depend linearly on the normal force for small tip-sample distances. © 2012 IOP Publishing Ltd.