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The electrical properties of the mismatched interface between InP and GaP have been investigatedted. High resolution transmission electron microscopy (HRTEM) image shows the presence of strain relieving, 90° misfit dislocations at the InP/GaP interface. Electrochemical capacitance voltage (ECV) profiling indicates the presence of a high-density sheet of carriers at the interface. AFM image shows a pretty good InP epitaxial layer with surface roughness of 2.48 nm has been obtained. A model based on Fermi-level pinning in InP at the interface by misfit dislocations is proposed to account for the observed electrical behavior.
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A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has not been fixed in the paper. © 2018, The Author(s).
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We use SrTiO3/Si as a model system to elucidate the effect of the interface on ferroelectric behavior in epitaxial oxide films on silicon. Using both first-principles computations and synchrotron x-ray diffraction measurements, we show that structurally imposed boundary conditions at the interface stabilize a fixed (pinned) polarization in the film but inhibit ferroelectric switching. We demonstrate that the interface chemistry responsible for these phenomena is general to epitaxial silicon-oxide interfaces, impacting on the design of silicon-based functional oxide devices. © 2010 The American Physical Society.
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We have prepared CuS and CuS-rGO nanocomposites via the hydrothermal method. The physical properties of the synthesized materials were studied through x-ray diffraction and scanning electron microscopy. The supercapacitor characteristics were evaluated by cyclic voltammetric and galvanostatic charge–discharge studies. The cyclic voltammetric studies conform the pseudocapacitive nature of CuS and CuS-rGO electrodes. The specific capacitance of CuS was obtained as 207, 150, and 97 F/g at a current density of 0.5, 5, and 20 A/g, respectively. The rGO-CuS nanocomposite showed improved specific capacitance of 350, 251, and 149 F/g at current densities of 0.5, 5, and 20 A/g, respectively. © 2023 Author(s).
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Manganese dioxide-multiwall carbon nanotube (MnO2-MWCNT) nanocomposites were synthesized via one-pot synthesis method with varying concentrations of 1 mg/ml, 4 mg/ml, and 10 mg/ml MWCNT. The synthesized nanocomposites were characterized using x-ray diffraction (XRD), transmission electron microscopy (TEM), and electrochemical measurements. The intent of studying different concentrations is, ultimately, to correlate the effect of the concentration of multiwall carbon nanotube on the electrochemical performance of the MnO2-MWCNT nanocomposites. Two primary phenomena were observed as CNT concentration increased. First, less crystalline MnO2 adsorption onto individual CNTs occurred. Subsequently, CNT agglomeration became the primary feature of the nanostructures of high CNT concentration. The electrochemical studies reveal that the specific capacitance of MnO2 increases from 124 F/g to 145 F/g by the addition of 1 mg/ml MWCNTs and decreases to 102 F/g for MnO2-10 mg/ml MWCNT nanocomposite. © 2023
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- English (5)