Your search
Results 2 resources
-
A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has not been fixed in the paper. © 2018, The Author(s).
-
We use SrTiO3/Si as a model system to elucidate the effect of the interface on ferroelectric behavior in epitaxial oxide films on silicon. Using both first-principles computations and synchrotron x-ray diffraction measurements, we show that structurally imposed boundary conditions at the interface stabilize a fixed (pinned) polarization in the film but inhibit ferroelectric switching. We demonstrate that the interface chemistry responsible for these phenomena is general to epitaxial silicon-oxide interfaces, impacting on the design of silicon-based functional oxide devices. © 2010 The American Physical Society.