Results | SCSU Bibliography

Su, J., Gherasimova, M., Cui, G., Tsukamoto, H., Han, J., Onuma, T., Kurimoto, M., Chichibu, S. F., Broadbridge, C., He, Y., & Nurmikko, A. V. (2005). Growth of AlGaN nanowires by metalorganic chemical vapor deposition. Applied Physics Letters, 87(18), 183108. https://doi.org/10.1063/1.2126113

Growth of ternary AlGaN nanowires using metalorganic chemical vapor deposition is investigated. Structural, chemical, and optical characterization at nanoscopic scale is carried out by high resolution transmission electron microscopy, x-ray energy dispersive spectroscopy, and spatially resolved cathodoluminescence. Spontaneous formation of Al (Ga) NGaN coaxial nanowires with distinct emission at 370 nm is observed. It is identified that the interplay between surface kinetics and thermodynamics facilitates the catalytic growth of GaN core while a limited surface diffusion of Al adatoms leads to nonselective, vapor-solid growth of Al(Ga)N sheath. The observation points to a fundamental difference in nanosynthesis using near-equilibrium and nonequilibrium techniques. © 2005 American Institute of Physics.

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Kumah, D., Reiner, J. W., Segal, Y., Kolpak, A. M., Zhang, Z., Su, D., Zhu, Y., Sawicki, M., Broadbridge, C., Ahn, C. H., & Walker, F. (2010). The atomic structure and polarization of strained SrTiO3/Si. Applied Physics Letters, 97(25), 251902. https://doi.org/10.1063/1.3529460

For thin film devices based on coupling ferroelectric polarization to charge carriers in semiconductors, the role of the interface is critical. To elucidate this role, we use synchrotron x-ray diffraction to determine the interface structure of epitaxial SrTiO3 grown on the (001) surface of Si. The average displacement of the O octahedral sublattice relative to the Sr sublattice determines the film polarization and is measured to be about 0.05 nm toward the Si, with Ti off-center displacements 0.009 nm away from the substrate. Measurements of films with different boundary conditions on the top of the SrTiO3 show that the polarization at the SrTiO3 /Si interface is dominated by oxide-Si chemical interactions. © 2010 American Institute of Physics.

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Singhal, R., Thorne, D., Chaudhary, M., Bhardwaj, S., Abazi, R., Gupta, R. K., Scanley, J., Broadbridge, C. C., Singh, B. P., LeMaire, P. K., & Sharma, R. K. (2023). Effect of reduce graphene oxide (Rgo) on electrochemical performance of Cus for supercapacitor applications (SSRN Scholarly Paper No. 4400862). https://doi.org/10.2139/ssrn.4400862

CuS and CuS-rGO nanocomposites were synthesized by the hydrothermal method. The synthesized CuS and rGO-CuS nanocomposite materials were physically characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM) and were evaluated electrochemically for supercapacitor applications. The specific capacitance of CuS was determined to be 207 F/g, 150 F/g, and 97 F/g at a current density of 0.5 A/g, 5 A/g, and 20 A/g, respectively. The rGO-CuS nanocomposite showed improved specific capacitance of 350 F/g, 251 F/g, and 149 F/g at a current density of 0.5 A/g, 5 A/g, and 20 A/g, respectively.

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Singhal, R., Fagnoni, J., Thorne, D., LeMaire, P. K., Martinez, X., Zhao, C., Gupta, R. K., Uhl, D., Scanley, E., Broadbridge, C. C., Manivannan, M., & Pandey, R. (2019). Study of MnO2-Graphene Oxide nanocomposites for supercapacitor applications. MRS Advances, 4(13), 777–782. https://doi.org/10.1557/adv.2019.86

Graphene oxide (GO)/MnO2 nanocomposites were synthesized by adding KMnO4 in a solution of water and ethanol (3:1), containing 10 mg of GO. Brown precipitates were obtained after a continuous stirring for 1 hr. The precipitates were then washed with deionized water (DI) water and dried to obtain the MnO2-GO nanocomposites. Pure MnO2 was also synthesized using the same method without GO for the comparison. X-ray diffraction pattern confirm δ-MnO2 type of MnO2 with birnessite type MnO2 structure. The TEM images show the average diameter of MnO2 nanorods as 15 nm. Electrochemical characterizations were carried out in an aqueous solution of 3M KOH. Charge-discharge studies were carried out between 1A/g to 20 A/g current range. The MnO2-GO nanocomposites showed improved electrochemical performances. The capacitance of MnO2 and MnO2-GO electrodes was found to be as 300 F/g, and 350 F/g, respectively at a current of 0.5 A/g. © 2019 Materials Research Society.

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Su, J., Cui, G., Gherasimova, M., Tsukamoto, H., Han, J., Ciuparu, D., Lim, S., Pfefferle, L. D., He, Y., Nurmikko, A. V., Broadbridge, C., & Lehman, A. H. (2005). Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition. Applied Physics Letters, 86(1), 13105. https://doi.org/10.1063/1.1843281

We report flexible synthesis of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Supersaturation and surface stoichiometry strongly influence the stability of liquid droplets and growth selectivity. To facilitate and sustain the VLS growth, indium catalyst is introduced based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Both GaN and AlN nanowires have been synthesized using MOCVD. Three-dimensional AlNGaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process. © 2005 American Institute of Physics.

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Liu, Y., Padmanabhan, J., Cheung, B., Liu, J., Chen, Z., Scanley, B. E., Wesolowski, D., Pressley, M., Broadbridge, C. C., Altman, S., Schwarz, U. D., Kyriakides, T. R., & Schroers, J. (2016). Combinatorial development of antibacterial Zr-Cu-Al-Ag thin film metallic glasses. Scientific Reports, 6(101563288), 26950. https://doi.org/10/f8pjkp

Metallic alloys are normally composed of multiple constituent elements in order to achieve integration of a plurality of properties required in technological applications. However, conventional alloy development paradigm, by sequential trial-and-error approach, requires completely unrelated strategies to optimize compositions out of a vast phase space, making alloy development time consuming and labor intensive. Here, we challenge the conventional paradigm by proposing a combinatorial strategy that enables parallel screening of a multitude of alloys. Utilizing a typical metallic glass forming alloy system Zr-Cu-Al-Ag as an example, we demonstrate how glass formation and antibacterial activity, two unrelated properties, can be simultaneously characterized and the optimal composition can be efficiently identified. We found that in the Zr-Cu-Al-Ag alloy system fully glassy phase can be obtained in a wide compositional range by co-sputtering, and antibacterial activity is strongly dependent on alloy compositions. Our results indicate that antibacterial activity is sensitive to Cu and Ag while essentially remains unchanged within a wide range of Zr and Al. The proposed strategy not only facilitates development of high-performing alloys, but also provides a tool to unveil the composition dependence of properties in a highly parallel fashion, which helps the development of new materials by design.

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Su, J., Gherasimova, M., Cui, G., Han, J., Lim, S., Ciuparu, D., Pfefferle, L. D., He, Y., Nurmikko, A. V., Broadbridge, C., Lehman, A. H., Onuma, T., Kurimoto, M., & Chichibu, S. F. (2004). Vapor-liquid-solid growth of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition. MRS Proceedings, 831, 753–758. https://doi.org/10.1557/PROC-831-E12.4

We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E 2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process. © 2005 Materials Research Society.

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