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This paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi2Ta2O9 (SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current-voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.
Last update from database: 3/13/26, 4:15 PM (UTC)