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The purpose of this study was to compare the ability of several texture analysis parameters to differentiate textured samples from a smooth control on images obtained with an Atomic Force Microscope (AFM). Surface roughness plays a major role in the realm of material science, especially in integrated electronic devices. As these devices become smaller and smaller, new materials with better electrical properties are needed. New materials with smoother surface morphology have been found to have superior electrical properties than their rougher counterparts. Therefore, in many cases surface texture is indicative of the electrical properties that material will have. Physical vapor deposition techniques such as Jet Vapor Deposition and Molecular Beam Epitaxy are being utilized to synthesize these materials as they have been found to create pure and uniform thin layers. For the current study, growth parameters were varied to produce a spectrum of textured samples. The focus of this study was the image processing techniques associated with quantifying surface texture. As a result of the limited sample size, there was no attempt to draw conclusions about specimen processing methods. The samples were imaged using an AFM in tapping mode. In the process of collecting images, it was discovered that roughness data was much better depicted in the microscope's "height" mode as opposed to "equal area" mode. The AFM quantified the surface texture of each image by returning RMS roughness and the first order histogram statistics of mean roughness, standard deviation, skewness, and kurtosis. Color images from the AFM were then processed on an off line computer running NIH ImageJ with an image texture plug in. This plug in produced another set of first order statistics computed from each images' histogram as well as second order statistics computed from each images' cooccurrence matrix. The second order statistics, which were originally proposed by Haralick, include contrast, angular second moment, correlation, inverse difference moment, and entropy. These features were computed in the 0°, 45°, 90°, and 135° directions. The findings of this study propose that the best combination of quantitative texture parameters is standard deviation, 0° inverse difference moment, and 0° entropy, all of which are obtained from the NIH ImageJ texture plug in. © 2010 Copyright SPIE - The International Society for Optical Engineering.
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A method has been developed to use the finite escape depth of the photoelectrons emitted in ultraviolet photoemission spectroscopy (UPS) to determine the electronic density-of-states at the interface between two dissimilar metal oxides. Ultrathin films of one oxide are grown heteroepitaxially, one monolayer at a time, on a single-crystal substrate of the other oxide, and UPS spectra are taken after each complete monolayer. By comparing experimental UPS spectra with calculated spectra based on specific models of the interfacial structure, the interfacial density-of-states can be extracted. The two oxide systems studied here are NiO-Fe 3O 4 and CoO-Fe 3O 4. The former system is found to have an atomically abrupt interface, with no significant density of interface states. For CoO, however, an interfacial electronic spectrum, different from that of either the substrate or the overlayer, is found. The spatial extent and possible origin of those interfacial states is discussed. © 2010 WILEY-VCH Verlag GmbH &. Co. KGaA, Weinheim.
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Valence electron energy-loss spectroscopy is used to investigate the plasmon excitations of ultrathin SrTiO3 sandwiched between amorphous Si and crystalline Si. Two plasmon excitations were observed, one at 15.8 eV and the other at 28.7 eV. Our calculations, based on dielectric-function theory, suggest that the former peak originates from the coupling of the Si layers and is related to the geometry of the structure, and the latter peak results from the SrTiO3 bulk plasmon after a redshift. Our findings demonstrate the value of valence electron energy-loss spectroscopy in detecting a local change in the effective electron mass. © 2010 American Institute of Physics.
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For thin film devices based on coupling ferroelectric polarization to charge carriers in semiconductors, the role of the interface is critical. To elucidate this role, we use synchrotron x-ray diffraction to determine the interface structure of epitaxial SrTiO3 grown on the (001) surface of Si. The average displacement of the O octahedral sublattice relative to the Sr sublattice determines the film polarization and is measured to be about 0.05 nm toward the Si, with Ti off-center displacements 0.009 nm away from the substrate. Measurements of films with different boundary conditions on the top of the SrTiO3 show that the polarization at the SrTiO3 /Si interface is dominated by oxide-Si chemical interactions. © 2010 American Institute of Physics.
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