Results | SCSU Bibliography

Kolpak, A. M., Walker, F. J., Reiner, J. W., Segal, Y., Su, D., Sawicki, M. S., Broadbridge, C. C., Zhang, Z., Zhu, Y., Ahn, C. H., & Ismail-Beigi, S. (2010). Interface-induced polarization and inhibition of ferroelectricity in epitaxial SrTiO3/Si. Physical Review Letters, 105(21). Scopus. https://doi.org/10.1103/PhysRevLett.105.217601

We use SrTiO3/Si as a model system to elucidate the effect of the interface on ferroelectric behavior in epitaxial oxide films on silicon. Using both first-principles computations and synchrotron x-ray diffraction measurements, we show that structurally imposed boundary conditions at the interface stabilize a fixed (pinned) polarization in the film but inhibit ferroelectric switching. We demonstrate that the interface chemistry responsible for these phenomena is general to epitaxial silicon-oxide interfaces, impacting on the design of silicon-based functional oxide devices. © 2010 The American Physical Society.

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Su, D., Vaz, C. A. F., Segal, Y., Walker, F., Ahn, C. H., Han, M.-G., Sawicki, M., & Broadbridge, C. (2011). Domain pinning and valence state switching in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 heterostructures. Microscopy and Microanalysis, 17(S2), 1400–1401. https://doi.org/10.1017/s1431927611007872

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Broadbridge, C., Garofano, J., Altman, E. I., Khalil, Y. F., Henrich, V. E., Segal, Y., Padmore, M., Michael, P., & Walker, F. (2009). Research grade instrumentation for nanotechnology and MSE education. MRS Proceedings, 1233, 17–22. https://doi.org/10.1557/PROC-1233-PP10-03

The Center for Research on Interface Structures and Phenomena (CRISP) is a National Science Foundation (NSF) Materials Research Science and Engineering Center (MRSEC). CRISP is a partnership between Yale University, Southern Connecticut State University (SCSU) and Brookhaven National Laboratory. A main focus of CRISP research is complex oxide interfaces that are prepared using epitaxial techniques, including molecular beam epitaxy (MBE). Complex oxides exhibit a wealth of electronic, magnetic and chemical behaviors, and the surfaces and interfaces of complex oxides can have properties that differ substantially from those of the corresponding bulk materials. CRISP employs this research program in a concerted way to educate students at all levels. CRISP has constructed a robust MBE apparatus specifically designed for safe and productive use by undergraduates. Students can grow their own samples and then characterize them with facilities at both Yale and SCSU, providing a complete research and educational experience. This paper will focus on the implementation of the CRISP Teaching MBE facility and its use in the study of the synthesis and properties of the crystalline oxide-silicon interface. C 2010 Materials Research Society.

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Su, D., Meng, Q., Vaz, C. A. F., Han, M.-G., Segal, Y., Walker, F., Sawicki, M., Broadbridge, C., & Ahn, C. H. (2011). Origin of 90° domain wall pinning in Pb(Zr0.2Ti0.8)O3 heteroepitaxial thin films. Applied Physics Letters, 99(10), 102902. https://doi.org/10.1063/1.3634028

We describe a transmission-electron-microscopy study of the ferroelectric domains in an epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) film grown on La0.7Sr0.3MnO3/SrTiO 3(001). We directly observe the pinning of 90 domain walls by pairs of misfit dislocations, respectively, with Burgers vectors a [100] and a [001]. Model calculations based on the elastic theory confirm our finding that, in addition to the depolarization field surrounding the dislocation, the strain field of misfit dislocation-pairs plays the primary role in the formation and pinning of a domains. © 2011 American Institute of Physics.

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Kumah, D., Reiner, J. W., Segal, Y., Kolpak, A. M., Zhang, Z., Su, D., Zhu, Y., Sawicki, M., Broadbridge, C., Ahn, C. H., & Walker, F. (2010). The atomic structure and polarization of strained SrTiO3/Si. Applied Physics Letters, 97(25), 251902. https://doi.org/10.1063/1.3529460

For thin film devices based on coupling ferroelectric polarization to charge carriers in semiconductors, the role of the interface is critical. To elucidate this role, we use synchrotron x-ray diffraction to determine the interface structure of epitaxial SrTiO3 grown on the (001) surface of Si. The average displacement of the O octahedral sublattice relative to the Sr sublattice determines the film polarization and is measured to be about 0.05 nm toward the Si, with Ti off-center displacements 0.009 nm away from the substrate. Measurements of films with different boundary conditions on the top of the SrTiO3 show that the polarization at the SrTiO3 /Si interface is dominated by oxide-Si chemical interactions. © 2010 American Institute of Physics.

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