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We report dramatic improvement in electrical properties of 4H-SiC/SiO2 interface by depositing an ultra-thin layer of silicon nitride on 4H-SiC prior to formation of silicon oxide and annealing. AC conductance measurements reveal interface-trap density equal to or below 1 × 1012/cm2- eV at energies near the conduction band edge. XPS spectra confirm the presence of N at the interface and suggest possible bonding between N and C. © (2002) Trans Tech Publications, Switzerland.
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