Full bibliography
Valence electron energy-loss spectroscopy of ultrathin SrTiO3 films grown on silicon (100) single crystal
Resource type
Authors/contributors
- Su, Dong (Author)
- Yang, Bo (Author)
- Jiang, Nan (Author)
- Sawicki, Monica (Author)
- Broadbridge, Christine (Author)
- Couillard, M (Author)
- Reiner, James W (Author)
- Walker, Fred (Author)
- Ahn, C H (Author)
- Zhu, Yimei (Author)
Title
Valence electron energy-loss spectroscopy of ultrathin SrTiO3 films grown on silicon (100) single crystal
Abstract
Valence electron energy-loss spectroscopy is used to investigate the plasmon excitations of ultrathin SrTiO3 sandwiched between amorphous Si and crystalline Si. Two plasmon excitations were observed, one at 15.8 eV and the other at 28.7 eV. Our calculations, based on dielectric-function theory, suggest that the former peak originates from the coupling of the Si layers and is related to the geometry of the structure, and the latter peak results from the SrTiO3 bulk plasmon after a redshift. Our findings demonstrate the value of valence electron energy-loss spectroscopy in detecting a local change in the effective electron mass. © 2010 American Institute of Physics.
Publication
Applied Physics Letters
Date
2010
Volume
96
Issue
12
Pages
121914
Journal Abbr
Appl Phys Lett
Citation Key
pop00103
ISSN
00036951 (ISSN)
Language
English
Extra
7 citations (Crossref) [2023-10-31]
Citation Key Alias: lens.org/008-562-101-735-184
tex.type: [object Object]
Citation
Su, D., Yang, B., Jiang, N., Sawicki, M., Broadbridge, C., Couillard, M., Reiner, J. W., Walker, F., Ahn, C. H., & Zhu, Y. (2010). Valence electron energy-loss spectroscopy of ultrathin SrTiO3 films grown on silicon (100) single crystal. Applied Physics Letters, 96(12), 121914. https://doi.org/10.1063/1.3364144
Link to this record