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Interface-induced polarization and inhibition of ferroelectricity in epitaxial SrTiO3/Si
Resource type
Authors/contributors
- Kolpak, A.M. (Author)
- Walker, F.J. (Author)
- Reiner, J.W. (Author)
- Segal, Y. (Author)
- Su, D. (Author)
- Sawicki, M.S. (Author)
- Broadbridge, C.C. (Author)
- Zhang, Z. (Author)
- Zhu, Y. (Author)
- Ahn, C.H. (Author)
- Ismail-Beigi, S. (Author)
Title
Interface-induced polarization and inhibition of ferroelectricity in epitaxial SrTiO3/Si
Abstract
We use SrTiO3/Si as a model system to elucidate the effect of the interface on ferroelectric behavior in epitaxial oxide films on silicon. Using both first-principles computations and synchrotron x-ray diffraction measurements, we show that structurally imposed boundary conditions at the interface stabilize a fixed (pinned) polarization in the film but inhibit ferroelectric switching. We demonstrate that the interface chemistry responsible for these phenomena is general to epitaxial silicon-oxide interfaces, impacting on the design of silicon-based functional oxide devices. © 2010 The American Physical Society.
Publication
Physical Review Letters
Date
2010
Volume
105
Issue
21
Journal Abbr
Phys Rev Lett
Citation Key
kolpakInterfaceinducedPolarizationInhibition2010
ISSN
00319007 (ISSN)
Archive
Scopus
Language
English
Extra
64 citations (Crossref) [2023-10-31]
Citation
Kolpak, A. M., Walker, F. J., Reiner, J. W., Segal, Y., Su, D., Sawicki, M. S., Broadbridge, C. C., Zhang, Z., Zhu, Y., Ahn, C. H., & Ismail-Beigi, S. (2010). Interface-induced polarization and inhibition of ferroelectricity in epitaxial SrTiO3/Si. Physical Review Letters, 105(21). Scopus. https://doi.org/10.1103/PhysRevLett.105.217601
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