Full bibliography
Improving 4H-SiC/SiO2 interface properties by depositing ultra-thin Si nitride layer prior to formation of SiO2 and annealing
Resource type
Authors/contributors
- Wang, X.W. (Author)
- Bu, H.M. (Author)
- Laube, B.L. (Author)
- Caragianis-Broadbridge, C. (Author)
- Ma, T.P. (Author)
- Yoshida S. (Series Editor)
- Nishino S. (Series Editor)
- Harima H. (Series Editor)
- Kimoto T. (Series Editor)
Title
Improving 4H-SiC/SiO2 interface properties by depositing ultra-thin Si nitride layer prior to formation of SiO2 and annealing
Abstract
We report dramatic improvement in electrical properties of 4H-SiC/SiO2 interface by depositing an ultra-thin layer of silicon nitride on 4H-SiC prior to formation of silicon oxide and annealing. AC conductance measurements reveal interface-trap density equal to or below 1 × 1012/cm2- eV at energies near the conduction band edge. XPS spectra confirm the presence of N at the interface and suggest possible bonding between N and C. © (2002) Trans Tech Publications, Switzerland.
Proceedings Title
Mater. Sci. Forum
Publisher
Trans Tech Publications Ltd
Date
2002
Volume
389-393
Pages
996
ISBN
02555476 (ISSN); 9780878498949 (ISBN)
Citation Key
wangImproving4HSiCSiO22002
Archive
Scopus
Language
English
Extra
1 citations (Crossref) [2023-10-31]
Journal Abbreviation: Mater. Sci. Forum
Citation
Wang, X. W., Bu, H. M., Laube, B. L., Caragianis-Broadbridge, C., & Ma, T. P. (2002). Improving 4H-SiC/SiO2 interface properties by depositing ultra-thin Si nitride layer prior to formation of SiO2 and annealing. In Yoshida S., Nishino S., Harima H., & Kimoto T. (Eds.), Mater. Sci. Forum (Vols. 389–393, p. 996). Trans Tech Publications Ltd. Scopus. https://doi.org/10.4028/www.scientific.net/MSF.389-393.993
Link to this record