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Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition
Resource type
Authors/contributors
- Su, J (Author)
- Cui, G (Author)
- Gherasimova, M (Author)
- Tsukamoto, Hironori (Author)
- Han, J (Author)
- Ciuparu, Dragos (Author)
- Lim, Sangyun (Author)
- Pfefferle, Lisa D (Author)
- He, Y (Author)
- Nurmikko, A V (Author)
- Broadbridge, Christine (Author)
- Lehman, Ann Hein (Author)
Title
Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition
Abstract
We report flexible synthesis of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Supersaturation and surface stoichiometry strongly influence the stability of liquid droplets and growth selectivity. To facilitate and sustain the VLS growth, indium catalyst is introduced based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Both GaN and AlN nanowires have been synthesized using MOCVD. Three-dimensional AlNGaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process. © 2005 American Institute of Physics.
Publication
Applied Physics Letters
Date
2005
Volume
86
Issue
1
Pages
13105
Journal Abbr
Appl Phys Lett
Citation Key
pop00028
ISSN
00036951 (ISSN)
Language
English
Extra
55 citations (Crossref) [2023-10-31]
Citation Key Alias: lens.org/046-539-752-343-072
tex.type: [object Object]
Citation
Su, J., Cui, G., Gherasimova, M., Tsukamoto, H., Han, J., Ciuparu, D., Lim, S., Pfefferle, L. D., He, Y., Nurmikko, A. V., Broadbridge, C., & Lehman, A. H. (2005). Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition. Applied Physics Letters, 86(1), 13105. https://doi.org/10.1063/1.1843281
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