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The interface formation mechanism during the molecular-beam epitaxy (MBE) of InAs/GaP has been studied with the aid of the In-Ga-P phase diagram. It is discovered that an initial dissolution and crystallization process similar to liquid phase epitaxy (LPE) may happen at sufficiently high temperature, resulting in a graded composition at the interface. Consequently, "parasitic LPE/MBE" is the name for this hybrid form of MBE. High-resolution TEM images confirm the existence of the interfacial layer in the sample grown at high temperature. The graded interface smears out the band offset and leads to a nonrectifying heterojunction. Low-temperature (LT) MBE growth can turn off the LPE component, enabling the growth of an abrupt interface. Based on this "LPE/MBE" model, a LT MBE technique is developed to grow an abrupt InAs/InGaP interface for heterojunction power Schottky rectifiers. The LT InAs/InGaP heterojunction demonstrates nearly ideal Schottky rectifier characteristics, while the sample grown at high temperature shows resistive ohmic characteristics. The LT InAs/InGaP Schottky diode also demonstrates good stability with respect to anneal temperature, similar to the InAs/GaP heterojunctions. © 2004 American Institute of Physics.

7 citations (Crossref) [2023-10-31] Citation Key Alias: lens.org/064-537-776-623-144 tex.type: [object Object]