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Vapor-liquid-solid growth of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition
Resource type
Authors/contributors
- Su, J (Author)
- Gherasimova, M (Author)
- Cui, G (Author)
- Han, J (Author)
- Lim, Sangyun (Author)
- Ciuparu, Dragos (Author)
- Pfefferle, Lisa D (Author)
- He, Y (Author)
- Nurmikko, A V (Author)
- Broadbridge, Christine (Author)
- Lehman, Ann Hein (Author)
- Onuma, T (Author)
- Kurimoto, M (Author)
- Chichibu, Shigefusa F (Author)
Title
Vapor-liquid-solid growth of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition
Abstract
We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E 2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process. © 2005 Materials Research Society.
Proceedings Title
MRS Proceedings
Date
2004
Volume
831
Pages
753-758
ISBN
02729172 (ISSN)
Citation Key
pop00116
Language
English
Extra
0 citations (Crossref) [2023-10-31]
Citation Key Alias: lens.org/001-591-869-918-808
tex.type: [object Object]
Citation
Su, J., Gherasimova, M., Cui, G., Han, J., Lim, S., Ciuparu, D., Pfefferle, L. D., He, Y., Nurmikko, A. V., Broadbridge, C., Lehman, A. H., Onuma, T., Kurimoto, M., & Chichibu, S. F. (2004). Vapor-liquid-solid growth of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition. MRS Proceedings, 831, 753–758. https://doi.org/10.1557/PROC-831-E12.4
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