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Origin of 90° domain wall pinning in Pb(Zr0.2Ti0.8)O3 heteroepitaxial thin films
Resource type
Authors/contributors
- Su, Dong (Author)
- Meng, Qingping (Author)
- Vaz, Carlos A. F. (Author)
- Han, Myung-Geun (Author)
- Segal, Y. (Author)
- Walker, Fred (Author)
- Sawicki, Monica (Author)
- Broadbridge, Christine (Author)
- Ahn, Chong H. (Author)
Title
Origin of 90° domain wall pinning in Pb(Zr0.2Ti0.8)O3 heteroepitaxial thin films
Abstract
We describe a transmission-electron-microscopy study of the ferroelectric domains in an epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) film grown on La0.7Sr0.3MnO3/SrTiO 3(001). We directly observe the pinning of 90 domain walls by pairs of misfit dislocations, respectively, with Burgers vectors a [100] and a [001]. Model calculations based on the elastic theory confirm our finding that, in addition to the depolarization field surrounding the dislocation, the strain field of misfit dislocation-pairs plays the primary role in the formation and pinning of a domains. © 2011 American Institute of Physics.
Publication
Applied Physics Letters
Date
2011-09-05, September 2011
Volume
99
Issue
10
Pages
102902
Journal Abbr
Appl Phys Lett
Citation Key
URL
ISSN
00036951 (ISSN)
Language
English
Extra
48 citations (Crossref) [2023-10-31]
Citation Key Alias: pop00042
tex.type: [object Object]
Citation
Su, D., Meng, Q., Vaz, C. A. F., Han, M.-G., Segal, Y., Walker, F., Sawicki, M., Broadbridge, C., & Ahn, C. H. (2011). Origin of 90° domain wall pinning in Pb(Zr0.2Ti0.8)O3 heteroepitaxial thin films. Applied Physics Letters, 99(10), 102902. https://doi.org/10.1063/1.3634028
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