Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers
Resource type
Authors/contributors
- Caragianis-Broadbridge, Christine (Author)
- Han, J (Author)
- Ma, T P (Author)
- Lehman, Ann Hein (Author)
- Zhu, Wenjuan (Author)
- Luo, Zhijiong (Author)
- Pechkis, Daniel (Author)
- Laube, Bruce L (Author)
Title
Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers
Abstract
This paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi2Ta2O9 (SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current-voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.
Publication
MRS Proceedings
Date
2001
Volume
666
Pages
F851-F856
Journal Abbr
Mater Res Soc Symp Proc
Citation Key
pop00142
ISSN
02729172 (ISSN)
Language
English
Extra
0 citations (Crossref) [2023-10-31]
Citation Key Alias: lens.org/010-822-098-712-167
tex.type: [object Object]
Citation
Caragianis-Broadbridge, C., Han, J., Ma, T. P., Lehman, A. H., Zhu, W., Luo, Z., Pechkis, D., & Laube, B. L. (2001). Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers. MRS Proceedings, 666, F851–F856. https://doi.org/10.1557/PROC-666-F8.5
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