Growth of AlGaN nanowires by metalorganic chemical vapor deposition
Resource type
Authors/contributors
- Su, J. (Author)
- Gherasimova, M. (Author)
- Cui, G. (Author)
- Tsukamoto, Hironori (Author)
- Han, J. (Author)
- Onuma, T. (Author)
- Kurimoto, M. (Author)
- Chichibu, Shigefusa F. (Author)
- Broadbridge, Christine (Author)
- He, Y. (Author)
- Nurmikko, Arto V. (Author)
Title
Growth of AlGaN nanowires by metalorganic chemical vapor deposition
Abstract
Growth of ternary AlGaN nanowires using metalorganic chemical vapor deposition is investigated. Structural, chemical, and optical characterization at nanoscopic scale is carried out by high resolution transmission electron microscopy, x-ray energy dispersive spectroscopy, and spatially resolved cathodoluminescence. Spontaneous formation of Al (Ga) NGaN coaxial nanowires with distinct emission at 370 nm is observed. It is identified that the interplay between surface kinetics and thermodynamics facilitates the catalytic growth of GaN core while a limited surface diffusion of Al adatoms leads to nonselective, vapor-solid growth of Al(Ga)N sheath. The observation points to a fundamental difference in nanosynthesis using near-equilibrium and nonequilibrium techniques. © 2005 American Institute of Physics.
Publication
Applied Physics Letters
Date
2005-10-31, October 2005
Volume
87
Issue
18
Pages
183108
Journal Abbr
Appl Phys Lett
Citation Key
URL
ISSN
00036951 (ISSN)
Language
English
Extra
37 citations (Crossref) [2023-10-31]
Citation Key Alias: pop00071
tex.type: [object Object]
Citation
Su, J., Gherasimova, M., Cui, G., Tsukamoto, H., Han, J., Onuma, T., Kurimoto, M., Chichibu, S. F., Broadbridge, C., He, Y., & Nurmikko, A. V. (2005). Growth of AlGaN nanowires by metalorganic chemical vapor deposition. Applied Physics Letters, 87(18), 183108. https://doi.org/10.1063/1.2126113
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