Electrical properties of mismatched interface between InP and GaP
Resource type
Authors/contributors
- Li, G.-H. (Author)
- Sun, Y.-N. (Author)
- Yulius, A. (Author)
- Broadbridge, C.C. (Author)
- Woodall, J.M. (Author)
Title
Electrical properties of mismatched interface between InP and GaP
Abstract
The electrical properties of the mismatched interface between InP and GaP have been investigatedted. High resolution transmission electron microscopy (HRTEM) image shows the presence of strain relieving, 90° misfit dislocations at the InP/GaP interface. Electrochemical capacitance voltage (ECV) profiling indicates the presence of a high-density sheet of carriers at the interface. AFM image shows a pretty good InP epitaxial layer with surface roughness of 2.48 nm has been obtained. A model based on Fermi-level pinning in InP at the interface by misfit dislocations is proposed to account for the observed electrical behavior.
Publication
Rengong Jingti Xuebao/Journal of Synthetic Crystals
Date
2007
Volume
36
Issue
5
Pages
1022-1025
Journal Abbr
Rengong Jingti Xuebao
Citation Key
liElectricalPropertiesMismatched2007
ISSN
1000985X (ISSN)
Archive
Scopus
Language
English
Citation
Li, G.-H., Sun, Y.-N., Yulius, A., Broadbridge, C. C., & Woodall, J. M. (2007). Electrical properties of mismatched interface between InP and GaP. Rengong Jingti Xuebao/Journal of Synthetic Crystals, 36(5), 1022–1025. Scopus. https://www.scopus.com/inward/record.uri?eid=2-s2.0-36649028972&partnerID=40&md5=6358570805c83c44bc199c0af1245d68
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