The atomic structure and polarization of strained SrTiO3/Si
Resource type
Authors/contributors
- Kumah, Divine (Author)
- Reiner, James W. (Author)
- Segal, Y. (Author)
- Kolpak, Alexie M. (Author)
- Zhang, Zhizhi (Author)
- Su, Dong (Author)
- Zhu, Yimei (Author)
- Sawicki, Monica (Author)
- Broadbridge, Christine (Author)
- Ahn, Chong H. (Author)
- Walker, Fred (Author)
Title
The atomic structure and polarization of strained SrTiO3/Si
Abstract
For thin film devices based on coupling ferroelectric polarization to charge carriers in semiconductors, the role of the interface is critical. To elucidate this role, we use synchrotron x-ray diffraction to determine the interface structure of epitaxial SrTiO3 grown on the (001) surface of Si. The average displacement of the O octahedral sublattice relative to the Sr sublattice determines the film polarization and is measured to be about 0.05 nm toward the Si, with Ti off-center displacements 0.009 nm away from the substrate. Measurements of films with different boundary conditions on the top of the SrTiO3 show that the polarization at the SrTiO3 /Si interface is dominated by oxide-Si chemical interactions. © 2010 American Institute of Physics.
Publication
Applied Physics Letters
Date
2010-12-20, December 2010
Volume
97
Issue
25
Pages
251902
Journal Abbr
Appl Phys Lett
Citation Key
URL
ISSN
00036951 (ISSN)
Language
English
Extra
25 citations (Crossref) [2023-10-31]
Citation Key Alias: pop00073
tex.type: [object Object]
Citation
Kumah, D., Reiner, J. W., Segal, Y., Kolpak, A. M., Zhang, Z., Su, D., Zhu, Y., Sawicki, M., Broadbridge, C., Ahn, C. H., & Walker, F. (2010). The atomic structure and polarization of strained SrTiO3/Si. Applied Physics Letters, 97(25), 251902. https://doi.org/10.1063/1.3529460
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