Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays
Resource type
Authors/contributors
- Hull, Robert (Author)
- Floro, J A (Author)
- Gherasimova, M (Author)
- Graham, J (Author)
- Gray, J L (Author)
- Portavoce, A (Author)
- Ross, Frances M (Author)
- Thorp, J (Author)
Title
Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays
Abstract
We employ focused ion beam patterning of single crystal Si(100) surfaces to template the assembly of Ge(Si) nanostructure arrays. The evolution and final structures of the templated arrays are determined by combinations of transmission electron, low energy electron microscope, focused ion beam and scanning probe microscopies. It is shown how the positions of individual nanostructures may be controlled to the order of 10 nm. However, to achieve controlled spacings between elements that are in the 10 nm range requires careful matching of the characteristic lengths scales of self assembly mechanisms to the length scales of the external lithographic "forcing functions". © 2010 IOP Publishing Ltd.
Proceedings Title
Journal of Physics: Conference Series
Conference Name
Journal of Physics: Conference Series
Publisher
Institute of Physics Publishing
Date
2010
Volume
209
Pages
12003
ISBN
17426588 (ISSN)
Citation Key
pop00127
Language
English
Extra
4 citations (Crossref) [2023-10-31]
Citation Key Alias: lens.org/048-366-191-463-372
Citation
Hull, R., Floro, J. A., Gherasimova, M., Graham, J., Gray, J. L., Portavoce, A., Ross, F. M., & Thorp, J. (2010). Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays. Journal of Physics: Conference Series, 209, 12003. https://doi.org/10.1088/1742-6596/209/1/012003
Link to this record