A high density two-dimensional electron gas in an oxide heterostructure on Si (001)
Resource type
Authors/contributors
- Jin, Eric N (Author)
- Kornblum, Lior (Author)
- Kumah, Divine (Author)
- Zou, Ke (Author)
- Broadbridge, Christine (Author)
- Ngai, J H (Author)
- Ahn, C H (Author)
- Walker, Fred (Author)
Title
A high density two-dimensional electron gas in an oxide heterostructure on Si (001)
Abstract
We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 1014 cm-2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies. © 2014 Author(s).
Publication
APL Materials
Date
2014
Volume
2
Issue
11
Pages
116109
Journal Abbr
APL Mater.
Citation Key
pop00064
ISSN
2166532X (ISSN)
Language
English
Extra
26 citations (Crossref) [2023-10-31]
Citation Key Alias: lens.org/087-040-511-772-110
tex.type: [object Object]
Citation
Jin, E. N., Kornblum, L., Kumah, D., Zou, K., Broadbridge, C., Ngai, J. H., Ahn, C. H., & Walker, F. (2014). A high density two-dimensional electron gas in an oxide heterostructure on Si (001). APL Materials, 2(11), 116109. https://doi.org/10.1063/1.4902433
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